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Surface wake potential (Comments to the paper by Kononets and Filippov)OHTSUKI, Y. H; KAWAI, R.Physica status solidi. B. Basic research. 1985, Vol 128, Num 2, pp K169-K170, issn 0370-1972Article

Critical analysis of the excitation map concept for studying threshold effects in VLEED. CommentLOPEZ, J; LE BOSSE, J. C; BAUDOING, R et al.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, issn 0370-1972, 12 p.Article

Effect of surface states of WO₃ on the operating characteristics of thin film electrochromic devicesYOSHIMURA, T; WATANABE, M; KOIKE, Y et al.Thin solid films. 1983, Vol 101, Num 2, pp 141-151, issn 0040-6090Article

Photoconductor surface states and detective quantum efficiencyBURGE, G.Solid state communications. 1983, Vol 45, Num 12, pp 1021-1023, issn 0038-1098Article

Topical Issue on Advances in Surface ScienceFERRANDO, Riccardo; VATTUONE, Luca.The European physical journal. B, Condensed matter physics (Print). 2010, Vol 75, Num 1, issn 1434-6028, 115 p.Serial Issue

Comments on surface electronic properties of TiC and TiNTOMASEK, M; PICK, S.Solid state communications. 1985, Vol 54, Num 9, pp 827-829, issn 0038-1098Article

Some remarks about surface effects in magnetic superconductorsFUSCO GIRARD, M; MANCINI, F.Physics letters. A. 1983, Vol 95, Num 8, pp 447-450, issn 0375-9601Article

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Atomic geometry and surface-state spectrum for Ge(111)-(2×1)NORTHRUP, J. E; COHEN, M. L.Physical review. B, Condensed matter. 1983, Vol 27, Num 10, pp 6553-6556, issn 0163-1829Article

High-resolution inverse-photoemission study of the Pd(111) surface = Etude par photoémission inverse à haute résolution de la surface Pd(111)HULBERT, S. L; JOHNSON, P. D; WEINERT, M et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 6, pp 3670-3673, issn 0163-1829Article

Electronic structure of Si and Ge (111) surfaces and the Si-Ge (111) interfaceAGRAWAL, B. K.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2517-2520, issn 0163-1829Article

Electronic structure of an unreconstructed (1010)α-quartz surfaceNYLEN, M.Physica status solidi. B. Basic research. 1984, Vol 122, Num 1, pp 301-308, issn 0370-1972Article

EXPERIMENTAL OBSERVATIONS OF THE EFFECTS OF OXIDE CHARGE INHOMOGENEITY ON FAST SURFACE STATE DENSITY FROM HIGH-FREQUENCY MOS CAPACITANCE-VOLTAGE CHARACTERISTICS.MCNUTT MJ; SAH CT.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 378-380; BIBL. 9 REF.Article

ETUDE DE QUELQUES PROPRIETES DU SYSTEME SI-SIO₂ OBTENU PAR DEPOSITION PLASMOCHIMIQUE DU DIOXYDE DE SILICIUMSULIMIN AD; OSTASHKIN LP; NEUSTROEV SA et al.1975; FIZ. KHIM. OBRABET. MATER.; S.S.S.R.; DA. 1975; NO 2; PP. 57-60; BIBL. 6 REF.Article

INFLUENCE DE LA SURFACE SUR LES PROPRIETES OPTIQUES DES SEMICONDUCTEURS ET DIELECTRIQUESKONSTANTINOV OV; PANAKHOV MM; SAJFULLAEV SH R et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 12; PP. 3551-3561; BIBL. 15 REF.Article

COMMENTARY ON THE EFFECT OF RELAXATION ON THE ELECTRONIC-ENERGY-LEVEL STRUCTURE OF THE SI(111) SURFACE.BATRA IP; CIRACI S.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 3; PP. 170-173; BIBL. 28 REF.Article

INVESTIGATION OF THE CHANGES IN THE ELECTRON-STATE SPECTRUM OF PLASTICALLY DEFORMED SILICON BY THE DIODE EFFECT.MIL'SHTEIN SK.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3894-3899; BIBL. 32 REF.Article

SURFACE-ELECTRONIC-STRUCTURE INFORMATION FROM BULK PLASMON PHOTOEXCITATION IN FREE-ELECTRON METAL FILMS.FEIBELMAN PJ.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 10; PP. 4282-4301; BIBL. 30 REF.Article

ETATS SUPERFICIELS RAPIDES ACTIVES PAR DES IONS ACTIVES D'ARGENT A L'INTERFACE GERMANIUM-ELECTROLYTE NEUTRESHIROKOV AA; BOZHKOV VG; VYATKIN AP et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1975; VOL. 58; NO 8; PP. 91-96; BIBL. 15 REF.Article

INFLUENCE DE L'ETAT DE SURFACE SUR LES PROPRIETES OPTIQUES DU GERMANIUMZAKHARCHUK AP; TEREKHOVA SF; TSEBULYA GG et al.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 12; PP. 2009-2011; ABS. ANGL.; BIBL. 8 REF.Article